2009 Fiscal Year Final Research Report
Formation mechanism of grown-in defects in Czochralski germanium crystal growth
| Project/Area Number |
20760003
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
TAISHI Toshinori Tohoku University, 金属材料研究所, 助教 (90397307)
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| Co-Investigator(Renkei-kenkyūsha) |
YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041)
OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
TOKUMOTO Yuki 東北大学, 金属材料研究所, 助教 (20546866)
MURAO Yu 東北大学, 大学院・理学部, 修士課程2年
ISE Hideaki 東北大学, 理学部, 4年
OHSAWA Takayuki 東北大学, 理学部, 4年
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| Project Period (FY) |
2008 – 2009
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| Keywords | 結晶成長 / 結晶評価 |
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| Research Abstract |
Germanium (Ge) has been expected as materials for high-speed ULSI devices and for the substrate or the bottom cell of III-V-based solar cells. In this study, grown-in defects, such as dislocation, precipitates and void, in Ge crystals grown by the Czochralski (CZ) method were experimentally evaluated and formation mechanisms of such defects were investigated.
As typical results, we succeeded in growing dislocation-free Ge crystals, and the new growth technique was proposed. An equilibrium segregation coefficient of B in Ge was found to be 6.2. When As concentration in a Ge crystal exceeded 1×10^<19>cm^<-3>, plate-like GeAs precipitates were formed along {111} plane.
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