2009 Fiscal Year Final Research Report
Fabrication of half-metallic thin films with large magnetic anisotropy andrealization of room-temperature high spin-polarization
Project/Area Number |
20760005
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Tohoku University |
Principal Investigator |
SAKURABA Yuya Tohoku University, 金属材料研究所, 助教 (10451618)
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Project Period (FY) |
2008 – 2009
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Keywords | スピントロニクス |
Research Abstract |
It is necessary to develop the ferromagnetic material with high spin-polarization and large magnetic anisotropy in order to improve a performance of spintronics devices. In this project, a large magnetic anisotropy was successfully applied to half-metallic Co_2MnSi from L1_0-orderd alloys FePt or CoPt in the L1_0-ordered alloy/thin Co_2MnSi stacking structure. Clear tunneling magnetoresistance was observed in the magnetic tunnel junctions with these electrodes.
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[Journal Article] Fabrication of perpendiculary magnetized magnetic tunnel junctions with L10-CoPt/Co2MnSi hybrid electrode2010
Author(s)
T. Hiratsuka, G. Kim, Y. Sakuraba, T. Kubota, K. Kodama, N. Inami, H. Naganuma, M. Oogane, T. Nakamura, K. Takanashi, Y. Ando
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Journal Title
Journal of Applied Physics 107
Pages: 09C714
Peer Reviewed
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