2011 Fiscal Year Final Research Report
Magnetic property control of GaN dilute magnetic semiconductors
Project/Area Number |
20760013
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Kyoto Institute of Technology |
Principal Investigator |
SONODA Saki 京都工芸繊維大学, 工芸科学研究科, 准教授 (30397690)
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Project Period (FY) |
2008 – 2011
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Keywords | スピンエレクトロニクス / MBE・エピタキシャル / 磁性 / 半導体物性 / 電子・電気材料 |
Research Abstract |
Band structure of 3d-transition metal doped III-nitrides have been investigated by using optical absorption and photoelectron yield spectroscopies. It was found that new energy states are formed in the intrinsic band gaps of GaN upon the 3d transition metal doping. Charge transport properties as a function of electrode metal work function indicate that carriers in the materials move in the new band and are consistent with the band structure deduced from the spectroscopic analyses.
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[Presentation]2009
Author(s)
園田早紀
Organizer
日本化学会第92回春季年会(招待講演)
Place of Presentation
慶應義塾大学(神奈川県)
Year and Date
2009-03-25