2009 Fiscal Year Final Research Report
Direct observations of recording marks in the phase-change disk
| Project/Area Number |
20760016
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
NAITO Muneyuki Osaka University, 理工学部, 講師 (10397721)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 相変化記録 / アモルファス / 透過電子顕微鏡 |
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| Research Abstract |
Atomistic structures of the Ge_2Sb_2Te_5 thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge_2Sb_2Te_5 films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser-irradiation-induced amorphous Ge_2Sb_2Te_5 was observed in the intensity profile of nano-beam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge_2Sb_2Te_5, which gives rise to the alteration of chemical order.
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