2009 Fiscal Year Final Research Report
Strain-released mechanism and electronic properties in Ge/Si hetero-structures
| Project/Area Number |
20760020
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
FUJIMOTO Yoshitaka Tokyo Institute of Technology, 大学院・理工学研究科, 特任助教 (70436244)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 計算物理 / ナノ材料 / 半導体物性 / 結晶成長 |
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| Research Abstract |
We investigate atomic structures and energetics of 90°dislocation cores in Ge films on Si substrate using the first-principles total-energy calculations. The dislocation core structure consisting of five- and seven-membered Ge rings is proposed and found to be stable with increasing Ge overlayers. The scanning tunneling microscopy images of 90°dislocation core structure are calculated and show the possibility to observe the proposed core structure.
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