2009 Fiscal Year Final Research Report
Creation of metallic state high-pressure phase of Si using femtosecond laser-driven nano-shock
Project/Area Number |
20760034
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Applied optics/Quantum optical engineering
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Research Institution | Osaka University |
Principal Investigator |
SANO Tomokazu Osaka University, 工学研究科, 准教授 (30314371)
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Project Period (FY) |
2008 – 2009
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Keywords | フェムト秒レーザー / 衝撃波 / レーザー衝撃波 / シリコン / 圧力誘起構造相転移 / 高圧相 / 金属化 |
Research Abstract |
The purpose of this study is to induce and quench the metallic state high-pressure phase of Si using femtosecond laser-driven nano shock and to create the metallic Si using only the femtosecond laser irradiation to Si. The high-pressure phase of Si exists only under pressure and does not remain after the pressure release due to the phase transitions to the original diamond phase and metastable phase using conventional methods. We succeeded for the first time in quenching the high-pressure phase of Si under atmospheric pressure using the femtosecond laser-driven shock wave.
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[Presentation] Hugoniot measurement of silicon up to 1. 1 TPa2009
Author(s)
T. Sano, A. Hirose, N. Ozaki, T. Kimura, K. Miyanishi, T. Endo, T. Jitsui, R. Kodama, Y. Sakawa, T. Mashimo, T. Sekine
Organizer
16th APS Topical Conference on Shock Compression of Condensed Matter (SCCM 2009)
Place of Presentation
Nashville, Tennessee, USA
Year and Date
20090628-20090703
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[Presentation] Deformation of Femtosecond Laser Shock-Loaded Silicon2008
Author(s)
M. Tsujino, T. Sano, N. Ozaki, R. Kodama, A. Hirose, O. Sakata, S. Kimura, S. Takeda, M. Okoshi, N. Inoue
Organizer
8th International Welding Symposium (8WS)
Place of Presentation
Kyoto, Japan
Year and Date
20081116-20081118
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