2010 Fiscal Year Final Research Report
High Resolution Mapping of Single Event Transient Current Due to High Energy Heavy Ion
| Project/Area Number |
20760051
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied physics, general
|
|---|
| Research Institution | Japan Atomic Energy Agency |
|---|
Principal Investigator |
ONODA Shinobu Japan Atomic Energy Agency, 量子ビーム応用研究部門, 研究員 (30414569)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Keywords | シングルイベント過渡電流 / トランジスタ / マッピング / 放射線 |
|---|
| Research Abstract |
The map of transient current induced by a single ion at silicon carbide transistors is measured. The mechanism of transient current is analyzed by using numerical device simulator. On the other hand, the novel mapping system has been developed. By using ZnS as a phosphor, the map of transient current is successfully observed although the spatial resolution is about several tens of micrometers. By using YAG:Ce and Diamond instead of ZnS, the spatial resolution increases about tenfold.
|
