Development of stress measurement method using Raman spectroscopy and biaxial tensile testing for micro/nanoscale structures

2009 Fiscal Year Final Research Report

• Project/Area Number: 20760075
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Materials/Mechanics of materials
• Research Institution: University of Hyogo
• Principal Investigator: NAMAZU Takahiro University of Hyogo, 大学院・工学研究科, 准教授 (90347526)
• Project Period (FY): 2008 – 2009
• Keywords: 応力 / 引張試験 / ラマン分光 / 単結晶Si

Research Abstract

We have designed and developed bi-axial tensile tester for film specimens, and obtained Raman spectra of micro/nanoscale single crystal silicon structures under uniaxial and biaxial stress states. As the results, Raman shift map around the Si structure under biaxial stress state was different from that under uniaxial stress state. By comparing Raman spectral parameters with stress components and its magnitude, we have confirmed that the parameters were correlated with stress components and magnitude. Integration of biaxial tensile testing with Raman spectroscopy enables us to precisely evaluate stress distribution of single crystal silicon structures in MEMS.

Research Products

• [Journal Article] Fatigue Life Prediction Criterion for Micro-Nanoscale Single-Crystal Silicon Structures (2009)
  • Author(s): T. Namazu, Y. Isono
  • Journal Title: IEEE/ASME J. Microelectromech. Syst. Vol.18 Pages: 129-137
  • Peer Reviewed
• [Journal Article] Raman Spectrum Curve Fitting for Estimating Surface Stress Distribution in Single-Crystal Silicon Microstructure (2009)
  • Author(s): M. Komatsubara, T. Namazu, Y. Nagai, S. Inoue, N. Naka, S. Kashiwagi, K. Ohtsuki
  • Journal Title: Japanese Journal of Applied Physics Vol.48 Pages: 04C021
  • Peer Reviewed
• [Presentation] Uniaxial Tensile Testing System for Quantitative Stress Analysis in Silicon Oxide Thin Films by Cathodoluminescence Spectroscopy (2009)
  • Author(s): N. Goami, N. Yamashita, N. Araki, S. Kakinuma, K. Nishikata, N. Naka, K. Matsumoto, T. Namazu, S. Inoue
  • Organizer: The 2008 International Conference on Solid State Devices and Materials, SSDM 2009
  • Place of Presentation: Sendai, Japan
  • Year and Date: 20090000
• [Presentation] Mechanical Degradation Mechanism of Aluminum-Alloy Structural Films Evaluated by Environment-Controlled Tensile Testing (2009)
  • Author(s): Y. Kaibara, H. Fujii, T. Namazu, Y. Tomizawa, K. Masunishi, S. Inoue
  • Organizer: 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2009
  • Place of Presentation: Denver, Colorado, USA
  • Year and Date: 20090000
• [Remarks]
  • URL: http://www.eng.u-hyogo.ac.jp/mse/mse12/index.html