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2009 Fiscal Year Final Research Report

Optical properties of rare-earth doped semiconducting silicides

Research Project

  • PDF
Project/Area Number 20760199
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

TERAI Yoshikazu  Osaka University, 工学研究科, 講師 (90360049)

Project Period (FY) 2008 – 2009
Keywordsシリサイド半導体 / 希土類添加半導体 / 半導体光物性
Research Abstract

We have investigated optical properties of rare-earth doped semiconducting silicides grown by ion implantation to develop silicon-based optoelectronics devices. Rare-earth ion of Er^<3+> was doped into β-FeSi_2 epitaxial films on Si substrate. The Er-doped β-FeSi_2 showed 1.5μm emission which is a wavelength for fiber optics communications.

  • Research Products

    (22 results)

All 2010 2009 2008 Other

All Journal Article (5 results) (of which Peer Reviewed: 5 results) Presentation (17 results)

  • [Journal Article] Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy2009

    • Author(s)
      K. Noda, Y. Terai, S. Hashimoto, K. Yoneda, Y. Fujiwara
    • Journal Title

      Applied Physics Letters 94(24)

      Pages: 241907/1-3

    • Peer Reviewed
  • [Journal Article] Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy2009

    • Author(s)
      Y. Terai, K. Noda, S. Hashimoto, Y. Fujiwara
    • Journal Title

      Journal of Physics: Conference Series 165

      Pages: 012023/1-4

    • Peer Reviewed
  • [Journal Article] Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy2009

    • Author(s)
      Y. Terai, S. Hashimoto, K. Noda, Y. Fujiwara
    • Journal Title

      Physica Status Solidi (c) 6(6)

      Pages: 1488-1491

    • Peer Reviewed
  • [Journal Article] Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping2008

    • Author(s)
      S. Hashimoto, Y. Terai, Y. Fujiwara
    • Journal Title

      Physica Status Solidi (c) 5(9)

      Pages: 3159-3161

    • Peer Reviewed
  • [Journal Article] Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation

    • Author(s)
      Y. Terai, T. Tsuji, K. Noda, Y. Fujiwara
    • Journal Title

      Physica E (in press)

    • Peer Reviewed
  • [Presentation] β-FeSi2エピタキシャル膜におけるPRスペクトルの成長方位依存性2010

    • Author(s)
      野田慶一、寺井慶和、米田圭佑、三浦直行、鵜殿治彦、藤原康文
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学, 平塚市
    • Year and Date
      2010-03-19
  • [Presentation] 変調分光法による鉄シリサイド半導体のバンド構造評価2010

    • Author(s)
      寺井慶和, 藤原康文
    • Organizer
      応用物理学会関西支部セミナー
    • Place of Presentation
      大阪大学, 吹田市
    • Year and Date
      2010-03-12
  • [Presentation] Photoluminescence properties of Er-doped β-FeSi2 grown by ion beam synthesis methods2009

    • Author(s)
      Y. Terai, T. Tsuji, K. Noda, Y. Fujiwara
    • Organizer
      14th International Conference on Modulated Semiconductor structures (MSS-14)
    • Place of Presentation
      Kobe, Japan
    • Year and Date
      20090719-20090724
  • [Presentation] Si/ β-FeSi2/Siダブルヘテロ構造におけるフォトリフレクタンス測定2009

    • Author(s)
      米田圭佑、野田慶一、寺井慶和、藤原康文
    • Organizer
      日本材料学会半導体エレクトロニクス部門研究会
    • Place of Presentation
      大阪工業大学、大宮キャンパス
    • Year and Date
      2009-12-19
  • [Presentation] Si/ β-FeSi2/Siダブルへテロ構造における変調反射スペクトル2009

    • Author(s)
      米田圭佑, 野田慶一, 寺井慶和, 藤原康文
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学, 富山市
    • Year and Date
      2009-09-10
  • [Presentation] Direct Bandgap Modifications in β-FeSi2 Epitaxial Films Revealed by Photoreflectance Measurement2009

    • Author(s)
      K. Noda, K. Yoneda, Y. Terai, Y. Fujiwara
    • Organizer
      5th Handai Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      Icho-Kaikan, Osaka University, Japan
    • Year and Date
      2009-09-01
  • [Presentation] フォトリフレクタンス法によるβ-FeSi2およびAl添加β-FeSi2の表面電界強度の評価2009

    • Author(s)
      米田圭佑、野田慶一、寺井慶和、藤原康文
    • Organizer
      第12回シリサイド系半導体夏の学校
    • Place of Presentation
      福岡県筑紫野市湯町二日市温泉大観荘
    • Year and Date
      2009-08-02
  • [Presentation] β-FeSi2エピタキシャル膜における直接遷移エネルギーの熱処理温度依存性2009

    • Author(s)
      野田慶一、米田圭佑、寺井慶和、藤原康文
    • Organizer
      第12回シリサイド系半導体夏の学校
    • Place of Presentation
      福岡県筑紫野市湯町二日市温泉大観荘
    • Year and Date
      2009-08-02
  • [Presentation] Band-gap modifications of β-FeSi2 epitaxial films grown by molecular beam epitaxy2009

    • Author(s)
      K. Noda, K. Yoneda, Y. Terai, Y. Fujiwara
    • Organizer
      28th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖、草津市
    • Year and Date
      2009-07-08
  • [Presentation] Si(111)基板上のβ-FeSi2エピタキシャル膜におけるバンドギャップ変調2009

    • Author(s)
      野田慶一, 米田圭佑, 寺井慶和, 藤原康文
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学、つくば市
    • Year and Date
      2009-04-01
  • [Presentation] Si(111)基板上のβ-FeSi2エピタキシャル膜におけるフォトリフレクタンス評価2009

    • Author(s)
      野田慶一、米田圭佑、寺井慶和、藤原康文
    • Organizer
      日本材料学会半導体エレクトロニクス部門研究会
    • Place of Presentation
      大阪大学, 吹田市
    • Year and Date
      2009-03-17
  • [Presentation] Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy2008

    • Author(s)
      Y. Terai, K. Noda, S. Hashimoto, Y. Fujiwara
    • Organizer
      International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008)
    • Place of Presentation
      Hotel Hankyu Expo Park, Osaka
    • Year and Date
      20081110-20081012
  • [Presentation] Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reaction deposition epitaxy2008

    • Author(s)
      Y. Terai, S. Hashimoto, K. Noda, Y. Fujiwara
    • Organizer
      35th International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      Europa-Park, Rust, Germany
    • Year and Date
      20080921-20080924
  • [Presentation] β-FeSi2エピタキシャル膜における直接遷移端の温度依存性2008

    • Author(s)
      野田慶一, 米田圭佑, 寺井慶和, 藤原康文
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学, 富山市
    • Year and Date
      2008-09-10
  • [Presentation] Al添加β-FeSi2におけるフォトリフレクタンス測定2008

    • Author(s)
      野田慶一、橋本正太郎、寺井慶和、藤原康文
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学, 春日井市
    • Year and Date
      2008-09-03
  • [Presentation] RDE法により作製したAl添加β-FeSi2エピタキシャル膜の結晶構造解析2008

    • Author(s)
      野田慶一, 寺井慶和, 橋本正太郎, 藤原康文
    • Organizer
      第11回シリサイド系半導体夏の学校
    • Place of Presentation
      鷲羽山下電ホテル, 倉敷市
    • Year and Date
      2008-08-02
  • [Presentation] Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy2008

    • Author(s)
      K. Noda, Y. Terai, S. Hashimoto, Y. Fujiwara
    • Organizer
      27th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ修善寺, 伊豆市
    • Year and Date
      2008-07-09

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Published: 2011-06-18   Modified: 2016-04-21  

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