2009 Fiscal Year Final Research Report
Development of highly efficient green light emitting devices using ZnMgTe/ZnTe quantum well structure
| Project/Area Number |
20760200
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Saga University |
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Principal Investigator |
TANAKA Tooru Saga University, 理工学部, 准教授 (20325591)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 発光ダイオード / 緑色 / 量子井戸構造 / ZnTe / ナノ |
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| Research Abstract |
In order to realize highly efficient green light emitting devices based on ZnTe, basic technologies for fabricating LEDs with a ZnMgTe/ZnTe quantum well structure have been investigated. As a result, the growth condition for obtaining a high-quality quantum well structure by molecular beam epitaxy was established. Also, several important basic technologies including a growth of hetero epitaxial layer with high carrier concentration by metalorganic vapor phase epitaxy were developed.
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