2010 Fiscal Year Final Research Report
Development of new devices using fullerene and GaAs heterostructures.
| Project/Area Number |
20760203
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Waseda University |
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Principal Investigator |
NISHINAGA Jiro Waseda University, 高等研究所, 助教 (90454058)
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| Co-Investigator(Renkei-kenkyūsha) |
HORIKOSHI Yoshiji 早稲田大学, 理工学術院, 教授 (60287985)
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| Project Period (FY) |
2008 – 2010
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| Keywords | フラーレン / GaAs / MBE / MEE / RHEED / 量子ドット |
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| Research Abstract |
Intensity oscillations of reflection high-energy electron diffraction (RHEED) are observed during epitaxial growth of a C_<60> layer on GaAs substrates. The frequencies of the oscillations coincide well with the growth rates of C_<60> layers, suggesting that C_<60> layers grow by layer-by-layer growth mode. C_<60> uniformly doped and delta-doped GaAs layers are grown by migration enhanced epitaxy method. C_<60> uniformly doped GaAs layers show highly resistive characteristics, suggesting that C_<60> molecules cannot be decomposed into isolated C atoms. Electrochemical capacitance-voltage profiles of C_<60> delta-doped GaAs layers suggest that C_<60> molecules in GaAs lattice produce deep electron traps which can be charged or discharged by applied electrical fields.
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