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2009 Fiscal Year Final Research Report

Development of self-assembled quantum dot lasers in lattice-matched GaAs/AlGaAs system

Research Project

  • PDF
Project/Area Number 20760207
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

MANO Takaaki  National Institute for Materials Science, 量子ドットセンター, 主任研究員 (60391215)

Research Collaborator KURODA Takashi  独立行政法人物質・材料研究機構, 量子ドットセンター, 主幹研究員 (00272659)
Project Period (FY) 2008 – 2009
Keywords薄膜 / 量子構造 / 量子ドット / 結晶成長 / 半導体レーザ
Research Abstract

We investigated and optimized droplet epitaxial quantum dot formation for their application to quantum dot lasers. We developed droplet epitaxy on GaAs (311)A surfaces and realized QDs with high density and high uniformity. Moreover, by optimizing the annealing processes, the optical qualities of QDs were improved drastically. As a result, optical pumped laser emission at room temperature was achieved.

  • Research Products

    (9 results)

All 2010 2009 2008 Other

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (4 results) Remarks (1 results)

  • [Journal Article] Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy2009

    • Author(s)
      T. Mano, M. Abbarchi, T. Kuroda, C.A. Mastrandrea, A. Vinattieri, S. Sanguinetti, K. Sakoda, M. Gurioli
    • Journal Title

      Nanotechnology 20巻

      Pages: 395601-1-395601-5

    • Peer Reviewed
  • [Journal Article] Ordering of GaAs Quantum dots by droplet epitaxy2009

    • Author(s)
      T. Mano, T. Kuroda, T. Noda, K. Sakoda
    • Journal Title

      Physics Status Solidi B 246巻

      Pages: 729-732

    • Peer Reviewed
  • [Journal Article] High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy2009

    • Author(s)
      T. Mano, T. Kuroda, K. Mitsuishi, T. Noda, K. Sakoda
    • Journal Title

      Journal of Crystal Growth 311巻

      Pages: 1828-1831

    • Peer Reviewed
  • [Journal Article] GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitax2008

    • Author(s)
      T. Mano, T. Kuroda, K. Mitsuishi, Y. Nakayama, T. Noda, K. Sakoda
    • Journal Title

      Applied Physics Letters 93巻

      Pages: 203110-1-203110-3

    • Peer Reviewed
  • [Presentation] 液滴エピタキシ法を用いたGaAs(001)基板上GaAs量子細線の形成2010

    • Author(s)
      定昌史、間野高明、迫田和彰
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
  • [Presentation] 低温キャップ層成長がGaAs/AlGaAs量子ナノ構造の光学特性に与える影響2010

    • Author(s)
      段国韜、間野高明、定昌史、迫田和彰
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
  • [Presentation] Droplet epitaxy on GaAs (111)A2009

    • Author(s)
      T. Mano, T. Kuroda, B. Mcskimming, A. Ohtake, K. Mitsuishi, M. Abbarchi, T. Noda, K. Sakoda
    • Organizer
      Semicon Nano 2009
    • Place of Presentation
      徳島・阿南高専
    • Year and Date
      2009-08-11
  • [Presentation] High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy2008

    • Author(s)
      T. Mano, T. Kuroda, K. Mitsuishi, T. Noda, K. Sakoda
    • Organizer
      15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      カナダ・バンクーバー・ブリティッシュコロンビア大学
    • Year and Date
      20080803-20080808
  • [Remarks]

    • URL

      http://www.nims.go.jp/nanophoto/qdr/

URL: 

Published: 2011-06-18   Modified: 2016-04-21  

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