2009 Fiscal Year Final Research Report
Fabrication of transparent high mobility light emitting devices by controlling lattice defects
| Project/Area Number |
20760448
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
OHNISHI Tsuyoshi National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, MANA研究者 (80345230)
|
|---|
| Project Period (FY) |
2008 – 2009
|
| Keywords | 表面 / 界面物性 |
|---|
| Research Abstract |
I have investigated to develop transparent, electrically conductive, and light emitting devices composed of SrTiO_3, which is a key material in oxide electronics, just like Si in semiconducting electronics. Formation of AlO_x thin films on SrTiO_3 single crystals and analyses of these samples resulted in constructions of transparent conductive, conductive light emitting, and transparent light emitting SrTiO_3. Formation design of transparent, conductive, and light emitting SrTiO_3 was obtained.
|
Research Products
(4 results)
