2009 Fiscal Year Final Research Report
Fabrication of multi-integrated dielectric-magnetic thin film deposited by sputtering method
| Project/Area Number |
20860012
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | Tohoku University |
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Principal Investigator |
YOKOI Atsushi Tohoku University, 電磁気材料グループ, 研究員 (60513760)
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| Co-Investigator(Renkei-kenkyūsha) |
MASUMOTO Hiroshi 東北大学, 学際科学国際高等研究センター, 教授 (50209459)
OHNUMA Shigehiro 財団法人電気磁気材料研究所, 電磁気材料グループ, 主席研究員 (50142633)
KOBAYASHI Nobukiyo 財団法人電気磁気材料研究所, 電磁気材料グループ, 主席研究員 (70205475)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 誘電性 / 磁性 / スパッタ法 / 誘電率 / 誘電損失 / 電気抵抗 / 薄膜 |
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| Research Abstract |
Fe-Ti-O, Co-Hf-O and Co-Y-O thin films were deposited by radio-frequency magnetron sputtering method, and the relationship between the magneto-dielectric properties and electrical resistivity of these thin films were investigated in order to clarify the possibility of a new magneto-dielectric material. The electrical resistivity was related to the variations in the magnetization and dielectric loss of Fe-Ti-O and Co-Hf-O thin films ; therefore, the electrical resistivity range of 1.0×10^6-1.0×10^8 (μΩcm) lead to the suitable magneto-dielectric properties in the oxides dielectric thin films. On the basis of the electrical resistivity, Co-Y-O thin films were deposited by sputtering method. The dielectric constant and dielectric loss of this thin film measured at a frequency of 100kHz were 39 and 0.56, respectively. Also, the magnetization of this thin film was 11kG, using the AGM. From these results, the control of the electrical resistivity in the thin film may have exerted and influence on the fabrication of the magneto-dielectric thin film.
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