2009 Fiscal Year Final Research Report

Analysis of interface between electrode and zinc oxide semiconductor for ultraviolet photo device

Research Project

Project/Area Number	20860014
Research Category	Grant-in-Aid for Young Scientists (Start-up)
Allocation Type	Single-year Grants
Research Field	Structural/Functional materials
Research Institution	Tohoku University
Principal Investigator	SAITO Mitsuhiro Tohoku University, 原子分子材料科学高等研究機構, 助教 (00510546)
Project Period (FY)	2008 – 2009
Keywords	界面 / 酸化亜鉛 / 電極 / 電子顕微鏡
Research Abstract	Schottky contact is essential for rectifiability between electrode and zinc oxide (ZnO) which can be applied as ultraviolet photo device. However, it was difficult to control formation of the electrode with stable Schottky contact. Elucidation of correlation between contacts and material properties has been required. Pd/ZnO interface was analyzed as model system by using a high-voltage high-resolution transmission electron microscope. The local atomic structure could by quantitatively determined and the interfacial electric state was simulated by first principle calculation. The correlation between the local atomic structure and electric properties could be elucidated.