2009 Fiscal Year Final Research Report
Evaluation of crystalline quality of GaInN grown on high-quality nonpolar or semipolar GaN
| Project/Area Number |
20860057
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Yamaguchi University |
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Principal Investigator |
OKADA Narihito Yamaguchi University, 大学院・理工学研究科, 助教 (70510684)
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| Project Period (FY) |
2008 – 2009
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| Keywords | サファイア加工基板 / GaN / GaInN / 非極性面 |
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| Research Abstract |
We established novel growth technique to fabricate high-quality nonpolar or semipolar GaN. The technique led GaN with "low-cost, large, and high-quality" which are essential for the commercialization. Specifically, GaN is grown from sapphire sidewall in stripe-patterned sapphire substrate. Finally, GaInN was grown on high-quality nonpolar or semipolar GaN and evaluated. As a result, we found the condition to obtain high-quality GaInN.
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[Presentation] r面サファイア加工基板上c面側壁からの半極性(11-22)GaN選択横方向成長とLEDへの応用2009
Author(s)
栗栖彰宏, 南雅博, 河野創一郎, 石田文男, 光井靖智, 村上一馬, 李伯成, 松本大志, 岡田成仁, 只友一行
Organizer
平成21年春季第56回応用物理学関係連合講演会
Place of Presentation
筑波大学, 茨城県
Year and Date
2009-04-01
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