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2009 Fiscal Year Final Research Report

Development of atmospheric-pressure plasma applied mist chemical vapor deposition and ZnO thin film growth under room temperature using the method.

Research Project

  • PDF
Project/Area Number 20860081
Research Category

Grant-in-Aid for Young Scientists (Start-up)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKochi University of Technology

Principal Investigator

KAWAHARAMURA Toshiyuki  Kochi University of Technology, ナノデバイス研究所, 助教 (00512021)

Project Period (FY) 2008 – 2009
Keywordsミスト化学気相成長(CVD)法 / 大気圧プラズマ / 薄膜成長 / 酸化亜鉛(ZnO) / ミスト液滴 / 機能薄膜 / 薄膜エッチング
Research Abstract

A novel low temperature thin-film fabricating method was created and developed using mist chemical vapor deposition with atmospheric-pressure plasma. In the development, the dynamics of the mist droplets at a reaction area were analyzed and the reaction of the mist rapidly proceeded with high reaction efficiency was revealed. Moreover, a novel etching technique using the mist was developed as a related technology. The developed methods can save the usages of chemical resources and total energy.

  • Research Products

    (5 results)

All 2010 2009 Other

All Presentation (2 results) Remarks (2 results) Patent(Industrial Property Rights) (1 results)

  • [Presentation] ミスト法を用いた新規エッチング手法の開発2010

    • Author(s)
      川原村敏幸
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
  • [Presentation] ミスト技術の応用-薄膜作製技術への挑戦-2009

    • Author(s)
      川原村敏幸
    • Organizer
      CVD研究会
    • Place of Presentation
      名古屋大学環境総合館LH
    • Year and Date
      2009-12-04
  • [Remarks]

    • URL

      http://repository.kulib.kyoto-u.ac.jp/dspace/handle/2433/57270

  • [Remarks]

    • URL

      http://www.kochi-tech.ac.jp/kut_J/university/pdf/prof/kawaharamure-toshiyuki.pdf

  • [Patent(Industrial Property Rights)] ミストエッチング装置及びミストエッチング方法

    • Inventor(s)
      川原村敏幸
    • Industrial Property Rights Holder
      高知工科大学
    • Industrial Property Number
      特許権特願2010-45991

URL: 

Published: 2011-06-18   Modified: 2016-04-21  

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