2022 Fiscal Year Final Research Report
Development of CPP-AMR single crstal thin films for nano-sized high-sensitive magnetic reproducing devices
Project/Area Number |
20H02177
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Review Section |
Basic Section 21050:Electric and electronic materials-related
|
Research Institution | Tohoku University |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
古門 聡士 静岡大学, 工学部, 教授 (50377719)
|
Project Period (FY) |
2020-04-01 – 2023-03-31
|
Keywords | スピントロニクス / 異方性磁気抵抗効果 |
Outline of Final Research Achievements |
In order to achieve large magnetoresistance ratio in single-layered ultra-thin ferromagnetic metallic thin films, we investigated anisotropic magnetoresistance (AMR) effect in current perpendicular to the plane (CPP) geometry. As an experimental approach, we decided the magnetoresistance coefficients in the Doring’s formula for Ni-Co-Fe binary alloy single crystal thin films and deduced an optimum crystal orientation for CPP-AMR. As a theoretical approach, we developed an AMR theory based on s-d scattering mechanism and its application methodology for practical magnetic materials. The availability of our theory was confirmed through the comparison with experimental results of iron-nitride and Co based full-Heusler alloy thin films.
|
Free Research Field |
磁性薄膜工学
|
Academic Significance and Societal Importance of the Research Achievements |
AMR効果は約160年前のケルヴィン卿による発見以来、強磁性体で観測される重要な電流磁気効果として現象論の範疇で理解され、様々なデバイス応用がなされてきたが、1970年代の先駆的な理論研究を除いて、電子論的観点からの十分な理解は得られていなかった。本研究は実験と理論の両面からAMR効果について検討を行った結果、極薄単結晶強磁性薄膜の磁気輸送特性の解明と応用に新たな一歩を与えたものである。
|