Development of fluoride based high-k dielectric thin film materials for MIS structure

2022 Fiscal Year Final Research Report

• Project/Area Number: 20H02188
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute for Materials Science
• Principal Investigator: Nagata Takahiro 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, グループリーダー (10421439)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 高誘電体 / 半導体 / ゲート絶縁膜 / ヘテロ界面 / 結晶成長 / フッ化物

Outline of Final Research Achievements

The object of our research is to dramatically reduce the power consumption of IT devices from the material level by improving the functionality of the semiconductor interface and reducing leakage current. For this object, we developed a high-k dielectric material for use in semiconductor devices. The target material is a fluoride gate dielectric material, and it was shown that this material can achieve both a band gap and a high dielectric constant with respect to semiconductors, and direct junction formation with semiconductors was realized. This material can achieve high insulation properties and is expected to be applied to semiconductor devices with low power consumption and high functionality.

Free Research Field

薄膜電子材料

Academic Significance and Societal Importance of the Research Achievements

従来材料とは異なる酸素を含まないフッ化物高誘電体材料を実用化が期待されている次世代半導体材料上に形成し、高誘電体材料の機能検証とその改善のための接合界面の改善を実施した。これにより、フッ化物が高誘電体として機能することを明らかにし、原子層の界面改善層を導入することで機能改善の可能性を見出した。まだ、期待された高誘電率の達成には至っていないが、将来のIT機器の消費電力の劇的な低減が期待できる材料である。