Characterization of potassium-modified layered graphene and its application to wafers for two-dimensional materials

2022 Fiscal Year Final Research Report

• Project/Area Number: 20H02191
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Yamada Takatoshi 国立研究開発法人産業技術総合研究所, 材料・化学領域, 研究チーム長 (30306500)
• Co-Investigator(Kenkyū-buntansha): 小川 修一 東北大学, 多元物質科学研究所, 助教 (00579203) ; 岡崎 俊也 国立研究開発法人産業技術総合研究所, 材料・化学領域, 副研究センター長 (90314054)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: グラフェン / 電気特性 / ドーピング / 化学修飾

Outline of Final Research Achievements

In order to develop substrates for high mobility graphene, K-modified stacked bilayer graphene and K-modified multilayer graphene were evaluated and the conduction mechanism was investigated. Synchrotron XPS showed that graphene contains about 1 mol% K in stacked two layers graphene and that the up-ward Fermi level shift was confirmed by K modification. TOF-SIMS showed that K in multilayer graphene exists both in-plane and in the thickness direction, however K is not uniformly distributed from the results of Raman spectroscopy.From EBAC characterization, we found that the in-plane resistance of K-modified graphene is not uniform. It was confirmed that the carrier mobility of graphene is increased by partially inserting K-modified graphene between graphene and SiO2.

Free Research Field

表面・界面物性

Academic Significance and Societal Importance of the Research Achievements

本研究によって、K修飾グラフェンの構造やグラフェン中のKの機能が確認され、K修飾グラフェンを中間層とすることで、電荷輸送層の移動度が増加することが確認されたことから、二次元材料の機能を引き出す下地材料として有用であることが示唆され、社会的意義が大きい。さらに、本研究で用いた放射光XPSやラマン分光法の結果から、素子作製工程を必要としない電気物性予測に発展する学術的意義がある成果が得られた。