Quantum dot formation by surface energy control and realization of highly reliable yellow semiconductor laser

2023 Fiscal Year Final Research Report

• Project/Area Number: 20H02192
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Akimoto Ryoichi 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (30356349)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 量子ドット / 半導体レーザー / 電子線

Outline of Final Research Achievements

A study was conducted on the formation of CdSe quantum dots using electron beam irradiation. It was revealed that when a flat CdSe surface at the atomic level, which had accumulated strain energy, was exposed to electron beam irradiation, relatively large quantum dots that emit light at yellow wavelengths were formed. The surface diffusion of Cd atoms was enhanced by the electron beam irradiation, which triggered the state transition from a flat surface to a three-dimensional uneven surface due to quantum dots and contributed to the formation of large-sized dots. A longer lasing wavelength up to 555nm was successfully achieved in devices that had quantum dots formed by electron beam irradiation as the active layer.

Free Research Field

光エレクトロニクス

Academic Significance and Societal Importance of the Research Achievements

本研究の学術的意義は、これまで他の方法では実現不可能であった黄色波長で発光する量子ドットを電子線照射により形成し、その発光特性と構造の関係を明らかにしたこと、表面エネルギー制御の観点から形成メカニズムについて明らかにしたこと、レーザー発振が可能であることを実証したことである。一方、社会的な意義として、将来、各種分析機器や非侵襲の治療や医療診断への応用が期待される黄色半導体レーザー実現に向けて、信頼性の向上が期待できる量子ドットを活性層にもつ素子の基盤となる技術的知見を獲得したことである。