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2022 Fiscal Year Final Research Report

Basic study of magnetic transcription of high-performance magnetic thin films by applying electric field to ferromagnetic and ferroelectric thin films

Research Project

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Project/Area Number 20H02195
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 21060:Electron device and electronic equipment-related
Research InstitutionAkita University

Principal Investigator

Yoshimura Satoru  秋田大学, 理工学研究科, 教授 (40419429)

Co-Investigator(Kenkyū-buntansha) 肖 英紀  秋田大学, 理工学研究科, 准教授 (10719678)
Project Period (FY) 2020-04-01 – 2023-03-31
Keywords強磁性・強誘電薄膜 / 高機能磁性薄膜 / 電界印加磁化反転 / 電界印加磁気転写 / 磁気デバイス
Outline of Final Research Achievements

In order to fabricate a BiFeO3-based ferromagnetic/ferroelectric thin film with excellent magnetic properties, a laser-assisted heating system which can increase the substrate temperatuire from 700℃ to 900℃ was introduced. The saturation magnetization increased around 1.5 times larger. La, Nd, Sm, Gd, and Dy were used as the elements substituting for A-site, and Co and Ni were used as the elements substituting for the B-site. A large saturation magnetization was obtained in (Bi,Nd)(Fe,Co)O3, large perpendicular magnetic anisotropy was obtained in (Bi,La)(Fe,Ni)O3, and large magnetic Kerr rotation angle was obtained in (Bi,La)(Fe,Co)O3. In addition, magnetization reversal of Co/Pd by applying an electric field to the laminated film of BiFeO3-based thin film and Co/Pd thin film was confirmed.

Free Research Field

磁性薄膜

Academic Significance and Societal Importance of the Research Achievements

超大容量・低消費電力稼働のレーストラックメモリ、超高速・不揮発の磁気ランダムアクセスメモリ、立体映像表示用の空間光変調器、などの次世代磁気デバイスにおいて、垂直磁化や高スピン分極率や巨大磁気Kerr効果などの高い機能性を有する磁性薄膜の磁化方向を反転させるための方法として、現在は、古典的な電流磁界や20年ほど前に実証されたスピン注入を用いることが想定されており、本手法では高い稼働電力が懸念される。強磁性・強誘電薄膜とこれらの高機能磁性薄膜を用いた積層膜において、電界印加磁気転写により高機能磁性薄膜の磁化反転ができることを実証した本研究は、次世代磁気デバイスの実装を加速させるものとなる。

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Published: 2024-01-30  

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