2022 Fiscal Year Final Research Report
Highly Efficient Semiconductor Membrane Lasers toward Drastic Reduction of Data Transmission Energy Cost
Project/Area Number |
20H02200
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
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Project Period (FY) |
2020-04-01 – 2023-03-31
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Keywords | 半導体レーザ / 接合 / 半導体薄膜 / オンチップ光配線 |
Outline of Final Research Achievements |
To realize on-chip optical wiring on future CMOS circuits, we conducted research to achieve the ultimate efficiency of semiconductor membrane lasers, which are expected to be used in low-power operation. By realizing a direct bonding technology using silicon nanofilms without any polymers, we have achieved a thermal resistance that is half that of conventional membranes, and demonstrated that it can operate in environments exceeding 100°C.In addition, by increasing optical confinement to a "optimal" level, we succeeded in reducing the threshold while avoiding hole-burning. Finally, using these technologies, photonic integrated circuits were fabricated on Si substrate and intra-chip data transmission were achieved at over 10 Gbps.
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Free Research Field |
光エレクトロニクス
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Academic Significance and Societal Importance of the Research Achievements |
本研究成果により、シリコン基板上のオンチップ光配線が効率よくデータ伝送が可能であることを示した。この成果は、近年問題になってくるトランジスタの小型化による、チップ内伝送距離の長尺化によるデータ伝送速度の制限をうち破り、トランジスタ自体が速くなればなるほど、チップの性能を向上できるという本来の流れに戻すことが可能となる。これは、今後も続いていく情報処理量の増加への要求に答えるため、重要な取り組みであると理解できる。
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