Development of high-speed nonvolatile memory using intersubband transitions for next-generation computing technology

2023 Fiscal Year Final Research Report

• Project/Area Number: 20H02214
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: NAGASE Masanori 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (80399500)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 窒化物半導体 / 共鳴トンネルダイオード / 量子井戸 / サブバンド間遷移現象 / 超高速情報処理

Outline of Final Research Achievements

High-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodes (GaN-based RTDs) was studied to realize a high-speed nonvolatile memory operating at picosecond time scales. Nonvolatile memory operations were successfully achieved on Si(111) substrates by constructing a new design method for GaN-based RTDs and improving crystal growth techniques for GaN-based RTDs. In addition, guidelines for realizing higher-performance nonvolatile memory characteristics were shown based on the obtained results and an operation mechanism of nonvolatile memory using GaN-based RTDs.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

IoT社会を支えるコンピューターの低消費電力化に向けて、超高速かつ低消費電力で動作可能な不揮発メモリの実現が期待されている。本研究成果は、その候補となる不揮発メモリの実現の可能性を示したものである。また、本研究で得られた窒化物半導体に関する知見や技術は、他の窒化物半導体デバイスの進展にも寄与できる可能性があることから、学術的にも社会的にも意義がある。