Light emitting diode using rare earth-doped amorphous oxide semiconductors on a glass substrate

2022 Fiscal Year Final Research Report

• Project/Area Number: 20H02433
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 26020:Inorganic materials and properties-related
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Ide Keisuke 東京工業大学, 元素戦略MDX研究センター, 助教 (70752799)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: アモルファス酸化物半導体 / 蛍光体 / 発光ダイオード

Outline of Final Research Achievements

We have explored phosphor thin films that can be produced at room temperature by adding rare earths (Eu, Pr, Tb) to amorphous oxide semiconductors. By using them as light-emitting layers, we have demonstrated the fabrication of light-emitting diodes on glass substrates. By applying DC voltage, red, green, and pink luminescent colors were observed, depending on the rare earths. The relationship between the 4f levels of the rare earths and the host material was clarified using hard X-ray photoemission spectroscopy and resonant photoemission spectroscopy, and the luminescence mechanism was discussed.

Free Research Field

アモルファス酸化物半導体

Academic Significance and Societal Importance of the Research Achievements

本研究で得られた希土類添加アモルファス酸化物半導体（AOS）は、電気伝導性と発光特性を併せ持つ、従来にない機能性材料である。今回の研究によって、発光ダイオードの発光層としての有用性が示された。この成果は、将来のフレキシブルエレクトロニクス実現に向けた重要な基礎技術となる可能性がある。またAOS中の希土類添加物の4f準位を実測した研究は他になく、学術的にも大きな意義があったと言える。