2022 Fiscal Year Final Research Report
Chemical etching of semiconductors assisted by graphene derivatives towords nano- and micro- fabrication.
| Project/Area Number |
20H02450
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 26030:Composite materials and interfaces-related
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Keywords | 酸化グラフェン / 半導体 / エッチング |
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| Outline of Final Research Achievements |
Graphene and its derivatives are 2D nanocarbon materials, and have been attracted in various research fields, due to their electrical and electrochemical properties. In this study, we demonstrated to apply graphene oxide (GO) as a catalyst for semiconductor etching processes. By using optimized composition of the etching solutions, the etch rate under the GO sheets became faster than that at non-covered areas, which can be referred as GO-assisted silicon etching. Also, combining with the micropatterned immobilization processes of GO sheets, we achieved the patterned pore formation with microscale width and depth both at liquid and vapor phase. Our studies can contribute to developing catalytic researches of nanocarbon materials, and semiconductor etching processes without utilizing metal-based catalysts.
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| Free Research Field |
表面工学
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| Academic Significance and Societal Importance of the Research Achievements |
グラフェン誘導体は数多くの研究が行われているが，本研究では半導体エッチング触媒という新たな応用展開を実現・確立した点に大きな意義がある．半導体エッチング技術は電子デバイスの生産において重要であり続けている．これまでにもより簡便・安価な半導体エッチング方法として貴金属触媒を用いたウェットエッチングが報告されてきたが，触媒除去などに課題が残されていた．本研究で用いたエッチング触媒は酸化グラフェン(GO)という金属フリーの二次元炭素材料である．エッチング速度など金属アシストエッチングに及ばない部分も残されているものの，新たな半導体表面構造制御プロセスとして貢献できると考えている．
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