Development of ultimate thin-film solar cells using atomic layer materials

2022 Fiscal Year Final Research Report

• Project/Area Number: 20H02851
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 36020:Energy-related chemistry
• Research Institution: Tokyo City University
• Principal Investigator: Ishikawa Ryousuke 東京都市大学, 付置研究所, 准教授 (50637064)
• Co-Investigator(Kenkyū-buntansha): 坪井 望 新潟大学, 自然科学系, 教授 (70217371) ; 星 裕介 東京都市大学, 理工学部, 准教授 (70748962)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 原子層薄膜 / 太陽電池 / ヘテロ接合 / CVD成長

Outline of Final Research Achievements

In order to clarify the operating mechanism of atomic layer heterojunction solar cells, we first evaluated solar cell characteristics and photoirradiation intensity dependence using GaSe/MoSe2 microheterojunction samples. Subsequently, by fabricating WSe2/MoS2 microheterostructures and investigating their basic optical properties, we clarified that there is a correlation between the twist angle and the thermal activation energy of interlayer excitons. In establishing a large-area synthesis method for atomic layer thin films, MoS2 growth by plasma sulfurization of Mo thin films and two-zone heating CVD was attempted, and MoS2 thin films of several centimeters in size were grown. In addition, we also established a growth method for MoS2 and WS2 by reactive sputtering.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

GaSe/MoSe2やWSe2/MoS2の原子層ヘテロ接合微小デバイスの基礎光学特性の理解は原子層科学の根本的な理解につながる。特にヘテロ接合におけるねじれ角の光学特性に及ぼす影響についての理解は学術的にも実用的にも重要であると考える。2ゾーン管状炉による大面積MoS2成長は原子層太陽電池の実現には有効な製膜技術であるが、プラズマ硫化と反応性スパッタによる原子層薄膜の成長も今後の多様な原子層材料の太陽電池応用を考えると非常に貴重な知見であると考える。