2021 Fiscal Year Annual Research Report
SiGe Channel FETs for High-Performance CMOS with Advanced High-K/SiGe Gate Stack
| Project/Area Number |
20J10380
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| Research Institution | The University of Tokyo |
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Principal Investigator |
李 宗恩 東京大学, 工学系研究科, 特別研究員(DC2)
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| Project Period (FY) |
2020-04-24 – 2022-03-31
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| Keywords | SiGe / MOS interface / high-k / interface trap states |
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| Outline of Annual Research Achievements |
Ultrathin EOT TiN/Y 2 O 3 /SiGe gate stacks with EOT of 1.05 nm, the low D it of 1.1×10 11 eV -1 cm -2 , and comparable leakage current among other reported Si-cap-free SiGe MOS interfaces has been demonstrated. The improvement of the performance and reduction of S.S. have been found in the Si 0.8 Ge 0.2 /SOI pFinFETs with this gate stack.
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| Research Progress Status |
令和3年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和3年度が最終年度であるため、記入しない。
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