2021 Fiscal Year Annual Research Report
3次元積層デバイス開発為の分子動力学計算によるプラズマエッチング反応の解析
| Project/Area Number |
20J20961
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| Research Institution | Osaka University |
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Principal Investigator |
Cagomoc Charisse Marie 大阪大学, 工学研究科, 特別研究員(DC1)
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| Project Period (FY) |
2020-04-24 – 2023-03-31
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| Keywords | plasma etching / 3D NAND / high-aspect ratio / molecular dynamics (MD) |
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| Outline of Annual Research Achievements |
The research to study the etching mechanism in HAR etching for 3D NAND application is divided into two parts: simulation and experiment. For the simulation, the etching of silicon based materials by fluorocarbon plasma was studied using molecular dynamics (MD). The etching yields from the simulation of SiO2 and Si3N4 etching by CF3+ ions (0.2 keV to 2 keV) were in good agreement with published ion beam experimental results. The energies in HAR etching are increasing to 10 keV, as such, the simulation was extended up to 6 keV. In line with this, ion beam experiments of SiO2 and Si3N4 etching by CF3+ ions (up to 5 keV) were done. The results showed that the experiment and simulation etching yields for SiO2 and Si3N4 were in good agreement up to 5 keV. Etching simulation of SiO2-Si3N4 bilayer, which represents a part of an oxide-nitride-oxide (ONO) multilayer used in 3D NAND, with CF3+ ions was also done to study the effect of the interface in etching. The results were summarized and presented in one domestic and one International conference both held online.
Aside from the ion beam experiments, plasma diagnostics experiments with a capacitively coupled plasma (CCP) system was also done. Langmuir probe measurement, optical emission spectroscopy (OES), impedance analysis, and current-voltage probe measurement were done on pure Ar, pure N2, and Ar-N2 plasmas. These diagnostics experiments were done to understand the factors affecting the flux during plasma etching in the HAR process.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
Both the experiments and the simulations are on track. The results of the research have been summarized in two papers and are pending for submission. Though there is some delay in the submission for journal publications, the research is progressing sufficiently. We were also able to present the results of the research in two conferences.
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| Strategy for Future Research Activity |
The research implementation plan is to consolidate the results from the plasma diagnostics experiments, to continue the ion beam experiments as well as the molecular dynamics simulation for the study of the high-aspect ratio etching. The plan also include presentation of the research to domestic and international conferences. Also, all simulations and results should be finished and be summarized to at least 3 journal publications.
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Research Products
(2 results)
