2022 Fiscal Year Final Research Report
Development of Si doped DLC film deposition technology for high-precision Si dopping and elucidation of mechanism of low friction
Project/Area Number |
20K04187
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Review Section |
Basic Section 18010:Mechanics of materials and materials-related
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Research Institution | Kanazawa Institute of Technology |
Principal Investigator |
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Project Period (FY) |
2020-04-01 – 2023-03-31
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Keywords | DLC膜 / Si添加DLC膜 / 耐熱性膜 / 機能性膜 / イオン照射 |
Outline of Final Research Achievements |
The author has discovered that adding a small amount of Si element to a DLC (Diamond-Like Carbon) film prevents the DLC film from disappearing even when exposed to high temperatures, and that there is a unique Si concentration with a low friction coefficient. In this study, Si element in the Si-doped DLC film exposed to a high-temperature environment exists as SiO2 crystals in the DLC film, and the barrier function of SiO2 prevents the film from disappearing. In addition, it was clarified that the DLC film containing SiO2 crystals may develop a low friction coefficient when it is composed of C elements in the range of Si:C=1:0.4-4.5. Moreover, the film formation technology for controlling the amount of Si added with high precision was also investigated, leading to the development of elemental technology.
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Free Research Field |
プラズマ工学
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Academic Significance and Societal Importance of the Research Achievements |
本研究でDLC膜の耐熱温度の改善はSiO2結晶含有DLC膜によるものであること、この膜を合成するためには膜中にSiOx結合を含んでいる必要があることを明らかにした。また、SiO2結晶含有DLC膜で低摩擦係数を実現するためにはSiO2結晶含有DLC膜のC/Si組成比が0.4~4.5程度必要である可能性があることが示唆された。また、高精度にSi添加量を制御するためのスパッタリング/ PBII&D複合成膜技術開発においては、基板材料に依存しないイオン照射機構を開発し、これによってDLC膜の欠点であった耐熱性を改善でき、かつそれを実現するための成膜技術の可能性を示すことができたと考えている。
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