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2022 Fiscal Year Final Research Report

Realization and application to spintronics of novel half metallic ternary transition-metal chalcogenides

Research Project

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Project/Area Number 20K04558
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionUniversity of Tsukuba

Principal Investigator

Kanazawa Ken  筑波大学, 数理物質系, 助教 (60455920)

Project Period (FY) 2020-04-01 – 2023-03-31
Keywords磁性半導体 / スピントロニクス / 分子線エピタキシー / 遷移金属カルコゲナイド / ハーフメタル / 遷移金属化合物
Outline of Final Research Achievements

In this study, we fabricated ternary transition-metal chalcogenides films, which consist of a magnetic semiconductor such as antiferromagnetic MnTe or ferromagnetic CrTe and another doped magnetic element. And we clarified that the magnetic doping induced drastic changes of magnetism such as ferromagnetic transition temperature and magnetic anisotropy. In particular, the Fe-doping in MnTe could induce the realization of novel perpendicular magnetic anisotropy to the film plane and electric conduction property, which is well corresponding to the magnetic property. Furthermore, we found that the exchange bias effect was induced at the interface of the MnTe/CrTe multi-layered structure.

Free Research Field

半導体スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

遷移金属カルコゲナイドに異種磁性元素を添加することで、その磁性が大きく変化し、新規な強磁性や磁気異方性が発現することが明らかとなった。また、これらの物質が半導体基板上に結晶性良く成長可能であることも観察された。これらの結果は、この物質群が今後、研究がさらに進むことで、スピン自由度を半導体デバイスに付加することで高性能化を実現する「半導体スピントロイニクス」に必要不可欠な磁性制御可能なスピン注入源等への応用が期待できることを示唆する結果である。

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Published: 2024-01-30  

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