2022 Fiscal Year Final Research Report
Physical Models of Temperature-dependent Resitivity and Hall Coefficient in Heavily Al-doped 4H-SiC
| Project/Area Number |
20K04565
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Osaka Electro-Communication University |
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Principal Investigator |
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Keywords | p型4H-SiC / IGBT / 高濃度Al添加4H-SiC / NNH伝導 / VRH伝導 / Hall係数 / Hall係数の符号反転 |
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| Outline of Final Research Achievements |
In order to reduce the resistivity of the p-type 4H-SiC substrate (collector) of SiC n-channel IGBT, we investigated the conduction mechanism in highly Al doping. Although Al-doped 4H-SiC is a p-type semiconductor, it has been experimentally found that the Hall coefficient becomes negative (i.e., n-type semiconductors) in hopping conduction such as NNH conduction and VRH conduction in the low-temperature region. Therefore, we have proposed a physical model for the sign of the Hall coefficient in hopping conduction. Furthermore, we have proposed a physical model that elucidates that the activation energies of the resistivity and Hall coefficient in the NNH conduction region are almost equal.
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| Free Research Field |
半導体工学
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| Academic Significance and Societal Importance of the Research Achievements |
アモルファス半導体においては、伝導型（p型またはn型）とは反対のホール係数の符号（負または正）が現れることが知られていて、理論的検討が行われている。
一方、結晶半導体では高濃度p型半導体でのホッピング伝導領域では、ホール係数が負になるとの報告はほとんど無く、さらに理論的検討は行われていない。したがって、今回提案した物理モデルには学術的意義がある。さらに、ホッピング伝導領域での抵抗率の活性化エネルギーとホール効果の活性化エネルギーがほぼ等しくなることは、我々の報告だけである。したがって、その物理モデルを提案できたことは学術的意義がある。
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