2022 Fiscal Year Annual Research Report
超高密度メモリデバイスを実現する反強磁性異方性トンネル接合素子の創製
| Project/Area Number |
20K04569
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
温 振超 国立研究開発法人物質・材料研究機構, 磁性・スピントロニクス材料研究拠点, 主任研究員 (40784773)
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Keywords | Tunnel magnetoresistance |
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| Outline of Annual Research Achievements |
In this project, we focused on developing antiferromagnetic materials for magnetic tunnel junctions (MTJs). We optimized three kinds of antiferromagnetic materials, i.e., FeRh, Mn3Ir, and RuO2. In a core structure of epitaxial buffer/FeRh/MgO/FeCo/cap, we achieved a tunnel magnetoresistance (TMR) ratio of ~20% at room temperature (RT) with a sign reversal of the TMR with polarity of applied bias voltage, where we found that the interface terminated layer of FeRh played an important role. In the structure of polycrystalline buffer/Mn3Ir/MgO/cap, the TMR ratio of ~3% at RT was observed. We also achieved fully epitaxial Mn3Ir thin films and highly conductive RuO2 colinear antiferromagnetic epitaxial films that will be useful for developing high-quality Mn3Ir/MgO and RuO2/TiO2 based MTJs.
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