2022 Fiscal Year Final Research Report
Heterojunction formation of conductive diamond and GaN, Ga2O3 for vertical device applications
| Project/Area Number |
20K04581
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Osaka Metropolitan University (2022)
Osaka City University (2020-2021) |
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Principal Investigator |
Liang Jianbo 大阪公立大学, 大学院工学研究科, 准教授 (80757013)
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| Co-Investigator(Kenkyū-buntansha) |
重川 直輝 大阪公立大学, 大学院工学研究科, 教授 (60583698)
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Keywords | ダイヤモンド / GaN / 放熱問題 / Ga2O3 / 直接接合 / 高耐熱性 / ヘテロ接合 |
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| Outline of Final Research Achievements |
GaN and diamond direct bonding were successfully fabricated at room temperature and the bonding interface demonstrated a high thermal stability of 1000°C. The intermediate layer thickness decreased with increasing annealing temperature due to the direct conversion of amorphous carbon into diamond. After annealing at 1000 °C, the thickness of the intermediate layer was decreased to 1.5 nm, where lattice fringes were observed. These results demonstrate that the GaN/diamond heterointerface has high mechanical stability and can withstand the harsh device fabrication process. Room-temperature bonding of diamond and Ga2O3 was achieved, and the interface structure was investigated. p+-Si/p-diamond and n+-Si/p-diamond heterojunction diodes were successfully fabricated by direct bonding Si and diamond and their current-voltage and current-voltage-temperature characteristics were investigated. The improvement of the ideality factor and the reduction of the leakage current was obtained.
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| Free Research Field |
半導体デバイス
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| Academic Significance and Societal Importance of the Research Achievements |
GaN/ダイヤモンド接合界面がGaNデバイス作製プロセスに必要な耐熱温度を有することを示し、高放熱性能を有するGaNデバイスの実現を可能にした。ダイヤモンドとGa2O3の常温接合の達成により、Ga2O3の低熱伝導率に起因する放熱問題の解決に対する可能性が示された。p+-Si /p-ダイヤモンドとn+-Si/p-ダイヤモンドヘテロ接合ダイオードが良好な電流-電圧特性を示し、直接接合による高機能性デバイスの実現性が示された。
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