Improvement of GaN MOSFETs by controlling GaN interfaces

2023 Fiscal Year Final Research Report

• Project/Area Number: 20K04587
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute for Materials Science
• Principal Investigator: Irokawa Yoshihiro 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 (90394832)
• Project Period (FY): 2020-04-01 – 2024-03-31
• Keywords: GaN / interface / hydrogen

Outline of Final Research Achievements

Recently, energy-loss reduction on power devices is strongly required to save the energy. Currently, Si power devices are mostly used, but the energy-loss is large. On the other hand, GaN power devices are expected to reduce the energy-loss due to the wide band gap. But, lack of understanding of interfaces in the devices is a barrier for the fabrication of the devices with ideal performances. Here, a novel interface evaluation method using hydrogen has been developed.

Free Research Field

化合物半導体

Academic Significance and Societal Importance of the Research Achievements

一般的に、パワーデバイスの酸化膜は結晶構造を持たないアモルファス構造のために、その膜質を評価することは難しい。本研究によって得られた酸化膜の特性評価法は、酸素空孔をも評価できる可能性があり、学術的に重要であると思われる。さらに、GaNの自然酸化膜が洗浄後の試料にも残存しており、デバイス特性に影響を及ぼしている可能性を明らかにした。