2022 Fiscal Year Final Research Report
Development of PTFE SIW integrated circuits for short millimeter-wave band by SR direct etching
| Project/Area Number |
20K04602
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Okayama Prefectural University |
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Principal Investigator |
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Keywords | 放射光直接エッチング / 微細加工 / 短ミリ波帯集積回路 / テフロンSIW |
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| Outline of Final Research Achievements |
It has demonstrated that the substrate integrated waveguide (SIW) type short millimeter-wave integrated circuits, which have structural strength and high flexibility in circuit design, can be realized.
The 4×4 Butler matrices integrated with the SIW cruciform 3-dB couplers and the SIW intersection circuits were designed at G-band (140-220 GHz) and fabricated as a trial.The validity of the design and fabrication results was confirmed from the fact that the measured directions of the antenna beam roughly agreed with the results of the numerical simulations.
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| Free Research Field |
マイクロ波ミリ波工学
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| Academic Significance and Societal Importance of the Research Achievements |
一般生活への無線通信端末が普及した現在、ミリ波帯やテラヘルツなどの未利用周波数領域の有効活用が強く求められている。100 GHzを超えるような高周波数領域では、回路素子も精密な微細構造が求められる。その際、微細構造の形状保持と回路設計の自由度、複数回路の集積化などが求められる。本研究成果は、これらに優れるSIW型導波路を用いて短ミリ波帯からテラヘルツ帯にまで適用可能なテフロンベースのSIW集積回路が実現することを示した。
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