Establishment of Technology for Nanostructured Thin-film Fabrication by Glancing-angle Deposition in Reactive Plasma Environments

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K05064
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 26010:Metallic material properties-related
• Research Institution: Chiba Institute of Technology
• Principal Investigator: Inoue Yasushi 千葉工業大学, 工学部, 教授 (10252264)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 斜入射堆積法 / 離散的柱状構造 / 反応性プラズマプロセス / 化合物薄膜材料 / 優先配向性

Outline of Final Research Achievements

The purpose of this study was to establish a deposition method for compound thin films with isolated columnar structures by reactive plasma processes with the glancing-angle deposition scheme. Titanium nitride, titanium oxide, tungsten oxide, and tin oxide thin films were prepared by applying the glancing-angle deposition scheme to reactive sputtering. For titanium nitride, the deposition pressure of 3 Pa was optimal for the formation of the isolated columnar structures. It was confirmed that the crystallinity and preferred orientation of the deposited films are the dominant factors, rather than the geometrical factors which have been considered most important in the glancing-angle deposition. In titanium oxide and tin oxide, we succeeded in forming partial deep voids by raising the substrate temperature, and obtained a guideline for realizing a discrete columnar structure.

Free Research Field

薄膜材料工学

Academic Significance and Societal Importance of the Research Achievements

本研究により，従来，真空蒸着法において発展してきた斜入射堆積法を反応性プラズマプロセスに適用が可能であることが示された．反応性プラズマ環境下の斜入射堆積法では，離散的柱状構造の形成における重要因子は，堆積プロセスにおける基板角度や原料供給源からの距離などの幾何学的因子ではなく，堆積膜の結晶性と優先配向性であることが明らかにされた．本研究により，従来はコストの高いリソグラフィー法によってのみ実現されてきた，化合物材料の離散的柱状構造化が，低コストの斜入射堆積法によって実現できることが示された．