Study of non-volatile memory in amorphous alumina

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K05096
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 26020:Inorganic materials and properties-related
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: Kubota Masato 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 原子力科学研究所 物質科学研究センター, 研究副主幹 (10370074)
• Co-Investigator(Kenkyū-buntansha): 加藤 誠一 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究員 (60354362)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: アルミ酸化物 / 不揮発メモリ

Outline of Final Research Achievements

To create the next-generation of memory, a high-performance and non-volatile memory system is required, which is characterized by high speed, low power consumption, and high endurance etc. Unfortunately, current memory devices such as DRAM, flash memory, FRAM and HDD do not satisfy these requirements. Resistance random access memory (ReRAM) which employs a resistance switching induced by voltage, is a promising candidate for the next-generation of memory. The ReRAM function in amorphous alumina with oxygen vacancy is hopeful because amorphous alumina does not include transition metal elements. Moreover, AlOx does notcontain any rare or noxious elements. It is clarified that the low resistance state is located in an area a few~10 nm from the surface of the thin film. It is also revealed that heating power during sample growth makes positron annihilation lifetime longer.

Free Research Field

物性物理

Academic Significance and Societal Importance of the Research Achievements

本研究で、不揮発メモリ機能を発現する薄膜の酸素空孔に関する物性を捉えることができた。アルミ酸化物は、稀少元素・有害元素を含まない低環境負荷材料である。化学変化により副生成物が生じないアルミ酸化物は、耐久性の高い不揮発メモリの材料として有望であると考えられ、今後、消費電力問題を解決できる電子材料になると期待される。