2023 Fiscal Year Final Research Report
Multilayer SiC quantum dot formation and evaluation of their physical properties
| Project/Area Number |
20K05257
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Review Section |
Basic Section 28020:Nanostructural physics-related
|
|---|
| Research Institution | Aichi Institute of Technology |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
五島 敬史郎 愛知工業大学, 工学部, 教授 (00550146)
岩田 博之 愛知工業大学, 工学部, 教授 (20261034)
|
|---|
| Project Period (FY) |
2020-04-01 – 2024-03-31
|
| Keywords | SiC / BN / SiC/BN積層 / CVD / SiCドット |
|---|
| Outline of Final Research Achievements |
SiC/BN stacked structures were fabricated on Si substrates by Cat-CVD using vinylsilane as the SiC source and TDMAB and NH3 as the BN sources. h-BN structure is the dominant BN structure. When the flow rate of vinylsilane was sufficient, XRD results showed that SiC grains of approximately 3 nm were observed in the 10-layer stacked structure. On the other hand, when the flow rate of vinylsilane was low, SiC was not significantly observed, but the surface morphology from AFM and the h-BN peak from FT-IR were changed. PL measurements showed that the introduction of vinylsilane increased the emission intensity around 380 nm and 680 nm. This stacked structure fabrication technique is useful for dot formation and doping.
|
| Free Research Field |
半導体
|
| Academic Significance and Societal Importance of the Research Achievements |
本研究ではSiCの原料としてはビニルシラン、BN原料としてはTDMABとNH3を用いて、Si基板上にSiC/BN積層構造をCat-CVDを用いてSiC量子ドット形成を試みた。この研究は新規なボトムアップによる量子ドット形成作製方法である。この手法を用いて、原料ガスの流量依存、積層数依存性などを調べることで、BN層に挟まれたSiCの状態や積層構造の発光特性について新しい知見を得ることができた。このことは学術的にも意義がある。また、様々なところで量子ドット応用が期待されている現在、量子ドット形成方法のバリエーションを増やすことは社会的にも意義がある。
|
