Creation of spin defects in the two-dimensional material boron nitride

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K05352
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: National Institutes for Quantum Science and Technology
• Principal Investigator: Yamazaki Yuichi 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 量子機能創製研究センター, 上席研究員 (10595060)
• Co-Investigator(Kenkyū-buntansha): 松下 雄一郎 東京工業大学, 物質・情報卓越教育院, 特任准教授 (90762336)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: スピン欠陥 / 窒化ホウ素 / 高温イオン照射 / 光検出磁気共鳴

Outline of Final Research Achievements

We optimized the formation conditions of boron vacancies (VB), one of the spin defects in the two-dimensional material boron nitride, and investigated new candidate of spin defects by theoretical calculations.
Two formation methods, high-temperature ion irradiation and room-temperature irradiation followed by post-annealing, were verified. Similar improvements were observed in optical and spin properties, as well as in the signal-to-noise ratio of the ODMR signal, which corresponds to sensor sensitivity. The zero-field splitting parameter E, which is a parameter related to crystal distortion, was clearly reduced by high-temperature ion irradiation at more than 600 °C. From the results, we concluded that high-temperature ion irradiation is a promising VB formation method with a low amount of crystal damage introduced. Substitutional defects of Cl (for N site) were extracted by theoretical calculations.

Free Research Field

量子技術

Academic Significance and Societal Importance of the Research Achievements

スピン欠陥は量子センサに応用可能であり、現在世界中で研究が行われている。スピン欠陥の特性は形成条件に大きく左右される。本研究によって、2次元材料窒化ホウ素中スピン欠陥についても、熱処理によって特性を改善可能であることが明らかとなった。量子センサを高性能化するために重要な知見である。新規スピン欠陥による高性能化も重要であり、欠陥候補を抽出できたことは、今後の探索研究に向けた有用な情報である。