Theoretical Study on Low-Power Neural Network Devices with High-Error Nonvolatile Memory

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K12003
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 61040:Soft computing-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: ARAI Hiroko 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (50431755)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: MRAM / 磁性メモリ / 書き込みエラー率 / WER

Outline of Final Research Achievements

In order to utilize memory devices with high error rate, we conducted a theoretical research on voltage-controlled magnetic random access memory (VC-MRAM), focusing on write and retention errors. The probability density function of the write error rate was derived under the assumption of a material parameter variations. Also, characteristic time between retention error and write error was discussed.

Free Research Field

スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

エラー率の高いメモリを利用したメモリシステムの実現に向けて、メモリシステムの設計、運用に必要となる基礎的な情報を提供できる理論的枠組みを構築した。