Deposition and application of ultra-thin phase transition oxide thin films by high power pulsed magnetron sputtering

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K14455
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 14030:Applied plasma science-related
• Research Institution: Seikei University
• Principal Investigator: Mian Md. Suruz 成蹊大学, 理工学部, 助教 (90867110)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 機能性酸化物薄膜 / 二酸化バナジウム(VO2) / 大電力パルススパッタ法 / スマートウインドウ

Outline of Final Research Achievements

In this study, the deposition of ultra-thin vanadium dioxide (VO2) on ZnO/Glass substrates using high-power pulsed magnetron sputtering (HiPIMS) techniques is attempted for applications such as solar cell surface temperature control and thermal shielding window glasses. First, ZnO thin films were deposited on glass substrates using direct current magnetron sputtering (DCMS) and HiPIMS. As a result, crystal growth was observed at lower temperatures with the HiPIMS method compared to the DCMS method. It was also found that the deposition rate of the HiPIMS method was higher than that of the DCMS method under the same deposition conditions. Subsequently, we attempted to deposit VO2 thin films using the HiPIMS and DCMS. The results suggested that achieving a stoichiometric VO2 film growth is difficult by the conventional constant oxygen flow control in cases of HiPIMS and DCMS.

Free Research Field

機能性酸化物薄膜プロセス

Academic Significance and Societal Importance of the Research Achievements

本研究では、DC法とHiPIMS法を用いてVO2薄膜の下地基板であるZnO薄膜の堆積を行い、同一の製膜条件において、HiPIMS法ではDC法よりも成膜速度が高くなる知見を得た。一般にHiPIMS法はDC法より成膜速度が遅いとされているが、反応性プロセスではこの関係が逆転したので今後、その理由を明確にできれば学術・産業的に大きな貢献を与えると考える。また、本研究期間にHiPIMS法を用いてVO2薄膜の成長ができなかったことは遺憾だが、従来用いられてきた、酸素流量を一定とするプロセスでは難しいことが示唆され、今後新たな流量制御法を検討することで、VO2薄膜の成長ができることを期待している。