ダイヤモンド反転型MOSFETにおけるチャネル移動度の制約因子の解明

2021 Fiscal Year Annual Research Report

• Project/Area Number: 20K14773
• Research Institution: Kanazawa University
• Principal Investigator: 張 旭芳 金沢大学, ナノマテリアル研究所, 特任助教 (30857404)
• Project Period (FY): 2020-04-01 – 2022-03-31
• Keywords: diamond / MOS / interface

Outline of Annual Research Achievements

Aiming at the low channel mobility of world’s first inversion-type p-channel diamond MOSFETs, we focused on the main limiting factor of the high interface state density at Al2O3/diamond interface. We proposed a novel technique to form OH-termination by using the hydrogenated diamond surface followed by wet annealing. The interface quality is significantly improved. Also, the trap properties at Al2O3-diamond interface were examined by high-low C-V method and conductance method. Besides, we applied the OH-termination formation technique and successfully fabricated the inversion-type p-channel heteroepitaxial diamond MOSFETs and made the electrical characterization.

Research Products

• [Journal Article] Inversion channel MOSFET on heteroepitaxially grown free-standing diamond (2021)
  • Author(s): Xufang Zhang, Tsubasa Matsumoto, Yuta Nakano, Hitoshi Noguchi, Hiromitsu Kato, Toshiharu Makino, Daisuke Takeuchi, Masahiko Ogura, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
  • Journal Title: CARBON Volume: 175 Pages: 615-619
  • DOI: 10.1016/j.carbon.2020.11.072
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Inversion-type p-channel diamond MOSFET issues (2021)
  • Author(s): Xufang Zhang, Tsubasa Matsumoto, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
  • Journal Title: Journal of Materials Research Volume: 36 Pages: 4688-4702
  • DOI: 10.1557/s43578-021-00317-z
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Presentation] Deep Interface Trap Analysis for Al2O3/Diamond MOS Structure by High-temperature Conductance Method (2021)
  • Author(s): Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, and Norio Tokuda
  • Organizer: NDNC
  • Int'l Joint Research
• [Presentation] High-temperature conductance analysis for Al2O3/diamond interface states (2021)
  • Author(s): Xufang Zhang, Tsubasa Matsumoto, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Dai Okamoto, Noriyuki Iwamuro, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
  • Organizer: IWDTF
  • Int'l Joint Research