Limiting factor elucidation of channel mobility in inversion-type p-channel diamond MOSFETs

2021 Fiscal Year Final Research Report

• Project/Area Number: 20K14773
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Kanazawa University
• Principal Investigator: Zhang Xufang 金沢大学, ナノマテリアル研究所, 特任助教 (30857404)
• Project Period (FY): 2020-04-01 – 2022-03-31
• Keywords: diamond / MOS / Interface

Outline of Final Research Achievements

Aiming at the low channel mobility of world’s first inversion-type p-channel diamond MOSFETs, we focused on the main limiting factor of the high interface state density at Al2O3/diamond interface. We proposed a novel technique to form OH-termination by using the hydrogenated diamond surface followed by wet annealing. The interface quality is significantly improved. Also, the trap properties at Al2O3-diamond interface were examined by conductance method. Besides, we applied the OH-termination formation technique and successfully fabricated the inversion-type p-channel heteroepitaxial diamond MOSFETs and made the electrical characterization.

Free Research Field

semiconductor physics

Academic Significance and Societal Importance of the Research Achievements

This study is meaningful for deep understanding of the interface states and is beneficial for developing more effective passivation techniques to improve the interface quality and device performance of diamond power MOSFETs, which is significant for the practical power application.