Realize of GeSn/Ge vertical nanowire and its application to next generation transitor

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K14796
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: National Institute for Materials Science
• Principal Investigator: MATSUMURA Ryo 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員 (90806358)
• Project Period (FY): 2020-04-01 – 2023-03-31
• Keywords: 結晶成長 / 電子デバイス / 光学デバイス

Outline of Final Research Achievements

In order to achieve the next generation of electronics, peripheral technology development for Ge-based thin film and heterostructure growth and device application was conducted. Bottom-up growth of Ge-based heterojunctions was achieved, along with the development of a non-equilibrium high-speed CW laser annealing method, which enabled the realization of Ge-based thin films with high crystal quality and strain. Band structure analysis was carried out using photoluminescence and optical absorption measurements, and an increase in luminescence efficiency and modulation of the bandgap were demonstrated.

Furthermore, in terms of device technology, a steep vertical p/n junction was realized, and a high-quality Al2O3 gate stack was achieved using atomic layer deposition.

Free Research Field

電気電子材料

Academic Significance and Societal Importance of the Research Achievements

本研究は、次世代エレクトロニクスに必要な高性能トランジスタ等の電子デバイスの基盤材料を開発することを目的に研究を行った。実現した材料は、良好な電子特性のみならず、良好な光学特性も有することが明らかになったため、電子デバイスだけでなく、光学デバイスにも応用可能と期待できる。GeはSiと同じIV族材料であり、従来のSi-LSI技術との整合性も高く、光学材料を組み込んだ光電融合LSIへの応用も可能となることから、幅広い応用範囲に波及する意義ある研究成果である。