2022 Fiscal Year Final Research Report
Development of conductive passivation layer using silicon nanocrystals
| Project/Area Number |
20K15127
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Project Period (FY) |
2020-04-01 – 2023-03-31
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| Keywords | ナノ構造 / 半導体 / 表面・界面 / 複合材料 |
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| Outline of Final Research Achievements |
In this study, silicon nanocrystal/silicon oxide composite films were investigated as conductive passivatinon films that provide both passivation to the silicon surface and transport of carriers such as electrons in the out-of-plane direction. Hydrogen plasma treatment (HPT) was performed to improve the surface protection performance of the composite film on the silicon surface. By optimizing the hydrogen plasma treatment process and proposing a two-step HPT method, the passivation performance against silicon surfaces was comparable to that of conventional passivation films. Furthermore, the conductive performance evaluated in terms of contact resistance was also sufficiently low. Therefore, this is an important result that contributes to the realization of conductive passivation films that function universally on various materials.
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| Free Research Field |
電気電子材料
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| Academic Significance and Societal Importance of the Research Achievements |
本研究では、シリコン表面に対する保護と面外方向への電子などのキャリアの輸送を両立する導電性保護膜として、シリコンナノ結晶/酸化シリコン複合膜の研究を行い、結晶シリコン表面に対する極めて高い保護性能と導電性が得られた。本研究は、半導体と異種材料を接合した際に形成される界面の制御技術の基盤となりうる。そのため、本研究は表面・界面制御工学の発展に寄与すると考えられる。また、様々な材料とシリコンを物理的には間隔をとりつつも電気的にはやり取りが可能とすることができるため、様々な材料をシリコンテクノロジーへ実装する際に必要となる材料になることが期待され、学術的にも社会的にも重要な成果が得られた。
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