Development of efficient green-light emitting diode based on band folding

2023 Fiscal Year Final Research Report

• Project/Area Number: 20K15170
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Hanzawa Kota 東京工業大学, 科学技術創成研究院, 助教 (30849526)
• Project Period (FY): 2020-04-01 – 2024-03-31
• Keywords: 半導体 / 薄膜成長 / 光物性 / ペロブスカイト / 硫化物 / 窒化物

Outline of Final Research Achievements

In this research project, we focused on non-oxide compounds with distorted perovskite-type structures owing to their superior electronic structures such as band folding for optoelectronic property and aimed to develop highly-efficient optical semiconductor devices. To realize the efficient device properties, it is essential to fabricate the high quality epitaxial thin films. For sulfide semiconductor SrHfS3 with outstanding optoelectronic characteristics and nitride compound LaWN3, which is a candidate of novel ferroelectric semiconductor, we developed the epitaxial thin-film growth processes and consequently succeeded in fabrications of the epitaxial films by pulsed laser deposition and magnetron sputtering techniques.

Free Research Field

無機化学

Academic Significance and Societal Importance of the Research Achievements

本研究では、光エネルギー変換材料の候補物質であるペロブスカイト型硫化物と窒化物の可能性を評価するためのファーストステップとして、エピタキシャル薄膜の作製を行った。光半導体デバイスなどにおいて、エピタキシャル薄膜を用いることが高効率化の必要条件であるため、デバイス作製の前段階として高品質なエピタキシャル薄膜を作製するプロセスを確立したことは学術的、また社会的にも意義が深く、重要な進歩と言える。