2021 Fiscal Year Final Research Report
Developing and Applications of Spintronics Materials by Growing Narrow-Gap Ferromagnetic Semiconductors
| Project/Area Number |
20K20361
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| Project/Area Number (Other) |
18H05345 (2018-2019)
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| Research Category |
Grant-in-Aid for Challenging Research (Pioneering)
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| Allocation Type | Multi-year Fund (2020)
Single-year Grants (2018-2019) |
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| Review Section |
Medium-sized Section 29:Applied condensed matter physics and related fields
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Tanaka Masaaki 東京大学, 大学院工学系研究科(工学部), 教授 (30192636)
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| Project Period (FY) |
2018-06-29 – 2022-03-31
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| Keywords | 強磁性半導体 / スピントロニクス / 狭ギャップ半導体 / ヘテロ構造 / 分子線エピタキシー / デバイス / 磁気抵抗効果 / 電界制御 |
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| Outline of Final Research Achievements |
We have solved almost all the problems of ferromagnetic semiconductors: 1) Realization of both p-type and n-type ferromagnetic semiconductors by creating Fe-doped III-V ferromagnetic semiconductors, 2) Realization of ferromagnetism in semiconductors at room temperature by raising the Curie temperature Tc above room temperature, optimization of their physical properties and functions, 3) Unified understanding of the origin of ferromagnetism and giving guidelines for materials design. Furthermore, various heterostructures and devices were fabricated to realize and demonstrate useful functions. For example, we discovered a new proximity magnetoresistance effect with a giant magnetoresistance ratio, which was successfully controlled by applying a gate electric field, and we successfully fabricated pn junctions composed entirely of ferromagnetic semiconductors. These results will serve as the basis for the realization of future spintronics devices.
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| Free Research Field |
スピントロニクス、電子材料物性、デバイス
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| Academic Significance and Societal Importance of the Research Achievements |
新しい強磁性半導体を開発し、半導体および磁性物理学、物性物理学とその応用分野の新しい境地を開いた。また本研究の成果は、不揮発性と柔軟な情報処理機能を持つスピントランジスタ、スピン依存バンド構造を用いた量子効果デバイス、トポロジカル状態を用いた機能デバイスなど、低消費電力で動作しかつ革新的な高機能デバイスの実現、につながると期待される。強磁性半導体を中心とする材料開発（"強磁性半導体のルネサンス"を起こすこと）によって、将来のニューロモルフィック・コンピューティング(NC)、モノのインターネット化(IoT), 人工知能(AI)に適したデバイスの基盤技術、将来の情報技術の一端を創ることができた。
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