2021 Fiscal Year Final Research Report
Development of dislocation dynamics simulator for 4H-SiC power devices
Project/Area Number |
20K22384
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Multi-year Fund |
Review Section |
0301:Mechanics of materials, production engineering, design engineering, fluid engineering, thermal engineering, mechanical dynamics, robotics, aerospace engineering, marine and maritime engineering, and related fields
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Research Institution | The University of Tokyo |
Principal Investigator |
Hiroki Sakakima 東京大学, 大学院工学系研究科(工学部), 助教 (50884194)
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Project Period (FY) |
2020-09-11 – 2022-03-31
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Keywords | SiC / 積層欠陥 / ファンデルワールス力 |
Outline of Final Research Achievements |
4H-SiC power devices, which are expected as next-generation devices, are facing a problem of performance degradation due to the expansion of stacking faults during operation. In this study, we have modelled the effect of mechanical stress on the forward voltage degradation phenomenon and conducted the theoretical calculation of the stacking fault energy considering van der Waals forces, which have not been taken into account. While the effects of stress on forward degradation can be predicted theoretically, detailed quantitative modeling of the phenomena still remains a challenge.
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Free Research Field |
材料力学、材料シミュレーション
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Academic Significance and Societal Importance of the Research Achievements |
近年の省エネルギー化への需要の急激な増加を受け、SiCパワーデバイスについても需要が急激に拡大しており、デバイスの高信頼性化へ向けた研究の社会的意義は高い。特に本研究で実施した、順方向劣化現象へ応力が与える影響のモデリングやファンデルワールス力を考慮した結晶特性の算出はこれまでにあまり注力した報告がなされていなかった分野であり、本研究で報告された成果は、今後のSiCデバイスの進化、高信頼性化にとって重要な技術、知見であると考えられる。
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