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2013 Fiscal Year Final Research Report

Development of Key Technologies for the Multi-probe Spectroscopy based on Near-field Optics

Research Project

  • PDF
Project/Area Number 21226001
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto University

Principal Investigator

KAWAKAMI Yoichi  京都大学, 工学(系)研究科(研究院), 教授 (30214604)

Co-Investigator(Kenkyū-buntansha) FUNATO Mitsuru  京都大学, 大学院工学研究科, 准教授 (70240827)
Co-Investigator(Renkei-kenkyūsha) OKAMOTO Koichi  九州大学, 先導物質化学研究所, 准教授 (50467453)
Project Period (FY) 2009-05-11 – 2014-03-31
Keywords近接場光学 / マルチプローブ分光 / 半導体ナノ構造 / 発光機構解明 / 新規顕微分光応用
Research Abstract

We have succeeded in the development of key technologies of the multi-probe spectroscopy based on near-field optics, where local area of a sample was photo-excited through an optical fiber probe having a small aperture, and the optical signal from a space a few hundreds nm apart was detected through another fiber probe. This spectroscopy enables us to visualize the recombination dynamics of elementary excitations such as carriers, excitons and plasmons in photonic materials like semiconductor nano-structures, and leads to a new tool for fundamental optical characterization.

  • Research Products

    (35 results)

All 2013 2012 2011 2010 2009 Other

All Journal Article (17 results) (of which Peer Reviewed: 17 results) Presentation (14 results) (of which Invited: 14 results) Book (1 results) Remarks (1 results) Patent(Industrial Property Rights) (2 results) (of which Overseas: 2 results)

  • [Journal Article] Huge electron-hole exchange interaction in aluminum nitride2013

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 87 Pages: 161204(R)/1-5

    • DOI

      10.1103/PhysRevB.87.161204

    • Peer Reviewed
  • [Journal Article] Remarkably suppressed luminescence inhomogeneity in a (0001) InGaN green laser structure2013

    • Author(s)
      M. Funato, Y. S. Kim, T. Hira, A. Kaneta, Y. Kawakami, T. Miyoshi and S. Nagahama
    • Journal Title

      Applied Physics Express

      Volume: 6 Pages: 111002/1-4

    • DOI

      10.7567/APEX.6.111002

    • Peer Reviewed
  • [Journal Article] Two-photon absorption induced anti-stokes emission in single InGaN/GaN quantum-dot-like objects2013

    • Author(s)
      R. Bardoux, M. Funato, A. Kaneta, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Physica Status Solidi-Rapid Research Letters

      Volume: 7 Pages: 344-347

    • DOI

      10.1002/pssr.201307067

    • Peer Reviewed
  • [Journal Article] Grain size dependence of surface plasmon enhanced photoluminescence2013

    • Author(s)
      X. Xu, M. Funato, Y. Kawakami, K. Okamoto and K. Tamada
    • Journal Title

      Optics Express

      Volume: 21 Pages: 3145-3151

    • URL

      http://www.opticsinfobase.org/oe/search2.cfm?reissue=J&journalList=4&fullrecord=Grain+size+dependence+of+surface+plasmon+enhanced+photoluminescence&basicsearch=Go

    • Peer Reviewed
  • [Journal Article] Interference of the surface plasmon polaritons with an Ag waveguide probed by dual-probe scanning near-field optical microscopy2012

    • Author(s)
      R. Fujimoto, A. Kaneta, K. Okamoto, M. Funato and Y. Kawakami
    • Journal Title

      Applied Surface Science

      Volume: 258 Pages: 7372-7376

    • DOI

      10.1016/j.apsusc.2012.04.034

    • Peer Reviewed
  • [Journal Article] Instrumentation for dual-probe scanning near-field optical microscopy2012

    • Author(s)
      A. Kaneta, R. Fujimoto, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Review of scientific instruments

      Volume: 83 Pages: 083709/1-11

    • DOI

      10.1063/1.4737883

    • Peer Reviewed
  • [Journal Article] Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {20-21} GaN substrate probed by scanning near-field optical microscopy2012

    • Author(s)
      A. Kaneta, Y. S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno and T. Nakamura
    • Journal Title

      Applied Physics Express

      Volume: 5 Pages: 102104/1-3

    • DOI

      10.1143/APEX.5.102104

    • Peer Reviewed
  • [Journal Article] Semipolar {n-n01} InGaN/GaN ridge quantum wells (n=1-3) fabricated by a regrowth technique2012

    • Author(s)
      M. Funato, T. Kotani, T. Kondou and Y. Kawakami
    • Journal Title

      Applied Physics Letters

      Volume: 100 Pages: 162107/1-4

    • DOI

      10.1063/1.4704779

    • Peer Reviewed
  • [Journal Article] Time-of-flight measurements of charge carrier diffusion in In_xGa_<1-x>N/GaN quantum wells2011

    • Author(s)
      J. Danhof, U. T. Schwarz, A. Kaneta and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 84 Pages: 035324/1-5

    • DOI

      10.1103/PhysRevB.84.035324

    • Peer Reviewed
  • [Journal Article] Micromirror arrays to assess luminescent nano-objects2011

    • Author(s)
      Y. Kawakami, A. Kanai, A. Kaneta, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Review of Scientific Instruments

      Volume: 82 Pages: 053905/1-5

    • DOI

      10.1063/1.3589855

    • Peer Reviewed
  • [Journal Article] All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress : definite breakdown of the quasicubic approximation2010

    • Author(s)
      R. Ishii, A. Kaneta, M. Funato and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 81 Pages: 155202/1-11

    • DOI

      10.1103/PhysRevB.81.155202

    • Peer Reviewed
  • [Journal Article] 100 mW deep ultraviolet emission from aluminum nitride based quantum wells pumped by an electron beam2010

    • Author(s)
      T. Oto, R. G. Banal, K. Kataoka, M. Funato and Y. Kawakami
    • Journal Title

      Nature Photonics

      Volume: 4 Pages: 767-771

    • DOI

      10.1038/nphoton.2010.220

    • Peer Reviewed
  • [Journal Article] Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy2010

    • Author(s)
      A. Kaneta, T, Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 3 Pages: 102102/1-3

    • DOI

      10.1143/APEX.3.102102

    • Peer Reviewed
  • [Journal Article] Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching2010

    • Author(s)
      Y. Kawakami, A. Kaneta, L. Su, Y. Zhu, K. Okamoto, M. Funato, A. Kikuchi and K. Kishino
    • Journal Title

      Journal of Applied Physics

      Volume: 107 Pages: 023522/1-7

    • DOI

      10.1063/1.3280032

    • Peer Reviewed
  • [Journal Article] Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk2009

    • Author(s)
      R. Bardoux, A. Kaneta, M. Funato, Y. Kawakami, A. Kikuchi and K. Kishino
    • Journal Title

      Physical Review B

      Volume: 79 Pages: 155307/1-6

    • DOI

      10.1103/PhysRevB.79.155307

    • Peer Reviewed
  • [Journal Article] High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics2009

    • Author(s)
      K. Okamoto and Y. Kawakami
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics

      Volume: 15 Pages: 1199-1209

    • DOI

      10.1109/JSTQE.2009.2021530

    • Peer Reviewed
  • [Journal Article] Near-field evidence of local polarized emission centers in InGaN/GaN materials2009

    • Author(s)
      R. Micheletto, M, Allegrini and Y. Kawakami
    • Journal Title

      Applied Physics Letters

      Volume: 95 Pages: 211904/1-3

    • DOI

      10.1063/1.3265732

    • Peer Reviewed
  • [Presentation] Visualization of recombination dynamics in nitride-based semiconductors2013

    • Author(s)
      Y. Kawakami, M. Funato and A. Kaneta
    • Organizer
      10th Intern. Conf. on Nitride Semiconductors
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2013-08-27
    • Invited
  • [Presentation] Semipolar faceting for InGaN-based polychromatic LEDs2013

    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      CLEO : 2013
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2013-06-13
    • Invited
  • [Presentation] High quality AlGaN-based quantum wells for deep-ultraviolet emitters2012

    • Author(s)
      M. Funato
    • Organizer
      16th Intern. Conf. on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2012-05-22
    • Invited
  • [Presentation] SNOM characterization on inhomogenity and defects in III-N alloy semiconductors2012

    • Author(s)
      Y. Kawakami
    • Organizer
      Intern. Workshop on SMART Energy Harvesting and Saving with III-Nitride Semiconductors
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2012-05-10
    • Invited
  • [Presentation] Recombination dynamics in InGaN-based nanostructures by scanning near-field optical microscopy2012

    • Author(s)
      Y. Kawakami
    • Organizer
      DYCE-ASIA Workshop
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2012-04-23
    • Invited
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2011

    • Author(s)
      Y. Kawakami
    • Organizer
      The Intern. Symp. on Advanced Nanomaterials and Nanosystems Joint with 4th Intern. Photonics and OptoElectronics Meetings
    • Place of Presentation
      Wuhan, China
    • Year and Date
      2011-11-02
    • Invited
  • [Presentation] Local carrier dynamics in InGaN quantum wells studied by scanning near-field optical microscopy2011

    • Author(s)
      A. Kaneta, M. Funato and Y. Kawakami
    • Organizer
      2011 SPIE Optics+Photonics
    • Place of Presentation
      California, USA
    • Year and Date
      2011-08-25
    • Invited
  • [Presentation] Visualization of the local carrier dynamics in InGaN SQW using dual probe scanning near field optical microscope2010

    • Author(s)
      A. Kaneta, T. Hashimoto, K. Nishimura, M. Funato and Y. Kawakami
    • Organizer
      Intern. workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, Frorida, USA
    • Year and Date
      2010-09-21
    • Invited
  • [Presentation] Applications of plasmonics toward high-efficiency LEDs and solar cells2010

    • Author(s)
      K. Okamoto and Y. Kawakami
    • Organizer
      The Intern. Symp. on Advanced Nanomaterials and Nanosystems 2010
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2010-05-21
    • Invited
  • [Presentation] Mapping of efficiency droop in InGaN quantum wells studied by scanning near-field optical microscopy2010

    • Author(s)
      Y. Kawakami, A. Hashiya, A. Kaneta and M. Funato
    • Organizer
      The 8th Intern. Symp. on Semiconductor Light Emitting Devices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-05-17
    • Invited
  • [Presentation] Semipolar (11-22)-oriented InGaN/GaN LEDs and their optical properties2009

    • Author(s)
      Y. Kawakami, M. Ueda, A. Kaneta and M. Funato
    • Organizer
      The 2nd International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2009-12-16
    • Invited
  • [Presentation] Polarization anisotropy in semipolar/polar nitride semiconductor quantum wells2009

    • Author(s)
      M. Funato and Y. Kawakami
    • Organizer
      8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-23
    • Invited
  • [Presentation] Recombination dynamics in semi-polar {11-22} InGaN/GaN quantum wells2009

    • Author(s)
      Y. Kawakami
    • Organizer
      6th International Workshop on Bulk Nitride Semiconductors
    • Place of Presentation
      Galindia Mazurski Eden, Poland
    • Year and Date
      2009-08-25
    • Invited
  • [Presentation] Characterization and control of recombination process in nitride semiconductors2009

    • Author(s)
      Y. Kawakami, A. Kaneta, M. Ueda and M. Funato
    • Organizer
      E-MRS Spring meeting 2009
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-11
    • Invited
  • [Book] フォトニックナノ構造の最近の進展, 第9章2011

    • Author(s)
      川上養一, (分担執筆)
    • Total Pages
      167-184
    • Publisher
      シーエムシー出版
  • [Remarks]

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2013

    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      米国US8479308B2
    • Acquisition Date
      2013-07-02
    • Overseas
  • [Patent(Industrial Property Rights)] 走査型プローブ顕微鏡及びそのプローブ近接検出方法2010

    • Inventor(s)
      西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Holder
      京都大学, 西村活人, 川上養一, 船戸充, 金田昭男, 橋本恒明
    • Industrial Property Rights Type
      国際特許
    • Industrial Property Number
      PCT/JP2010/060494
    • Filing Date
      2010-06-21
    • Overseas

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Published: 2015-06-25  

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